TISP4500H3BJ Series Datasheet by Bourns Inc.

Bounws- — V V TISP4500HSBJ 350 500 1 2 MDrSMBrnUta GRVIOEQVCORE T smxspmmm Va TISPASOOHSBJ SMB(007214AAD EmbossedTapeRee‘ed T‘smsuoHaEJRS A
TISP4500H3BJ Overvoltage Protector
TISP4500H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Device Symbol
Non-Conductive During K.20/21/45 Power Contact Test
- Off-State Voltage ......................................................... >245 V rms
- For Controlled Environment .....................................0 °C to 70 °C
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
How To Order
SMBJ Package (Top View)
Description
This device is designed to limit overvoltages on the telephone line to ±500 V over the temperature range. The minimum off-state voltage
of ±350 V allows a.c. power contact voltages of up to 245 V rms to occur without clipping. The combination of these two voltages gives
protection for components having ratings of 500 V or above and ensures the protector is non-conducting for the ITU-T recommendations
K.20/21/45 230 V rms power cross test condition (test number 2.3.1).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
Device
VDRM
V @ 0°C
V(BO)
V @ 70 °C
TISP4500H3BJ 350 500
Wave Shape Standard
I
PPSM
A
2/10 GR-1089-CORE 500
10/250 GR-1089-CORE 230
10/700 ITU-T K.20/21/45 200
10/1000 GR-1089-CORE 100
TR
MD-SMB-004-a
21
T
R
SD-TISP4xxx-001-a
Device PackageCarrier
TISP 4500H3B J SMB (DO-214AA) E m bossed T a pe Reeled TISP4500H3BJR-S
Marking
Code
4500H3
Std. Qty.
3000
Order As
........................................................................ UL Recognized
Agency Recognition
Description
UL File Number: E215609
*RoHS Directive 2015/863, Mar 31, 2015 and Annex.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov
APRIL 2001 – REVISED JULY 2019
Rating Symbol Value Unit Repetrtwe peak oflrstate vo1tage VDRM :350 v Nonrrepettttve peak onrstate pu1se current (see Notes 1 and 2) 2/10 (Tetcord1a 607105970005. 2/10 us vo1tage wave 5 10/250 fletcordta GRrTOEQrCORE, 10/250 us voltage w 10/700 (ITUrT K.20/21/45, 5/310 s current wave shape) 10/1000 (remordra GFHOBQrCORE, 10/1000 us voltage TA Nonrrepettttve peak onrstate eurrent tsee Notes 1, 2 and a) 50 Hz‘ 20 ms 50 Hz‘ 1000 s Juncttun temperature TJ 740 to +150 =0 Storage temperature range Ts‘g 765 to +150 =0 Parameter Test Conditions Mln Typ Max Unlt Repetmve peak 0th TA : 25 °C :5 state current TA :10 W50) Breakover voltage dv/dt : £50 V/ms, RSOURCE: 300 n 3500 v 1TUrTrecommendat1on K44 (02/2000) thure All/KM 10170 Charge vmtage : :4 kv “BO, Breakover current dv/d £50 V/ms. RSOURCE: 300 n 20.6 A IH Hmdtng current ‘1: j A, dt/dt : 7/4/30 mA/rns 20,15 A ID Onastate current VD : :50 V TA : 70 °C :10 pA 1:1MHz‘Vd:1vas,VD:0 34 VD VD VD Parameter Test Commons Mln Typ Max Unit EtA/JESDSIrS PCB, I “may TA 265 mm x 210 mm poputated Ime card,
Electrical Characteristics, 0 °C ≤ TA ≤ 70 °C (Unless Otherwise Noted)
TISP4500H3BJ Overvoltage Protector
Absolute Maximum Ratings, 0 °C ≤ TA ≤ 70 °C (Unless Otherwise Noted)
Thermal Characteristics
Parameter Test Conditions Min Typ Max Unit
IDRM
Repetitive peak off-
state current VD = VDRM
TA = 25 °C
TA = 70 °C
±5
±10 µA
V(BO) Breakover voltage dv/dt =±250 V/ms, RSOURCE =300 Ω ±500 V
V(BO)
Impulse breakover
voltage
ITU-T recommendation K.44 (02/2000)
Figure A.3-1/K.44 10/700 impulse generator
Charge Voltage = ±4 kV
±500 V
I(BO) Breakover current dv/dt =±250 V/ms, RSOURCE =300 Ω ±0.6 A
IHHolding current IT=±5 A, di/dt =-/+30 mA/ms ±0.15 A
IDOff-state current VD=±50V TA = 70 °C ±10 µA
Coff Off-state capacitance
f = 1 MHz, Vd = 1 V rms, VD = 0
f = 1 MHz, Vd = 1 V rms, VD = -1 V
f = 1 MHz, Vd = 1 V rms, VD = -2 V
f = 1 MHz, Vd = 1 V rms, VD = -50 V
84
67
62
31
pF
Parameter Test Conditions Min Typ Max Unit
RθJA Junction to free air thermal resistance
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 5) 113
°C/W
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), T
A = 25 °C 50
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Ratin
gS
ymbol Valu
eU
nit
Repetitive peak off-state voltage VDRM ±35
0V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
IPPSM
500
230
200
100
A
2/10 (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape)
10/250 (Telcordia GR-1089-CORE, 10/250 µs voltage wave shape)
10/700 (ITU-T K.20/21/45, 5/310 s current wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape)
TA = 25 °C
TA = 25 °C
TA = 25 °C
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
ITSM ±55
±2.0
A
50 Hz, 20 ms (1 cycle)
50 Hz, 1000 s
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg-65 to +150 °C
NOTES: 1. Initially the device must be in thermal equilibrium.
2. The surge may be repeated after the device returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
APRIL 2001 – REVISED JULY 2019
BOURNS®
Parameter Measurement Information
TISP4500H3BJ Overvoltage Protector
Figure 1. Voltage-current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
-v
I(BR)
V(BR)
VD
IH
ITSM
IPPSM
V(BO)
I(BO)
ID
Quadrant I
Switching
Characteristic
+v
+i
V(BO)
I(BO)
I(BR)
V(BR)
VD
ID
IH
ITSM
IPPSM
-i
Quadrant III
Switching
Characteristic PM4XAD
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
APRIL 2001 – REVISED JULY 2019
OURNS SMB Land Panern (new BOURNS' 47 W 4» BIB Device Symbolizalion Code TISP4500H3EJ 4500H3
MECHANICAL DATA
TISP4500H3BJ Overvoltage Protector
Recommended Printed Wiring Land Pattern Dimensions
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
SMB Land Pattern
MDXX
BIB
2.54
(.100)
2.40
(.094)
2.16
(.085) MM
(INCHES)
DIMENSIONS ARE:
DeviceSymbolization Code
TISP4500H3BJ 4500H3
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is registered in the U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
APRIL 2001 – REVISED JULY 2019
Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com
Europe: Tel: +36 88 885 877 • Email: eurocus@bourns.com
The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com
www.bourns.com
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and complete before placing orders for Bourns® products.
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