DG2519E Datasheet by Vishay Siliconix

Datasheet Feedback/Errors

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DG2519E

www.vishay.com Vishay Siliconix

S17-0461-Rev. A, 03-Apr-17 1Document Number: 78595

For technical questions, contact: analogswitchtechsupport@vishay.com

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High-Bandwidth, Low Voltage, Dual SPDT Analog Switches

DESCRIPTION

The DG2519E is monolithic CMOS dual single-pole /

double-throw (SPDT) analog switches. It is specifically

designed for low-voltage, high bandwidth applications.

The DG2519E on-resistance, matching and flatness are

guaranteed over the entire analog voltage range. Wide

dynamic performance is achieved with typical at -61 dB for

both cross-talk and off-isolation at 1 MHz.

Both SPDT’s operate with independent control logic,

conduct equally well in both directions and block signals up

to the power supply level when off. Break-before-make is

guaranteed.

With fast switching speeds, low on-resistance, high

bandwidth, and low charge injection, the DG2519E are

ideally suited for audio and video switching with high

linearity.

Built on Vishay Siliconix’s low voltage CMOS technology,

the DG2519E contain an epitaxial layer which prevents

latch-up

FEATURES

• Single supply (1.8 V to 5.5 V)

• Low on-resistance - RON: 2.5 

• Crosstalk and off isolation: -61 dB at 1 MHz

• MSOP-10 and DFN-10 package

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

BENEFITS

• Reduced power consumption

• High accuracy

• Reduce board space

• Low-voltage logic compatible

• High bandwidth

APPLICATIONS

• Cellular phones

• Speaker headset switching

• Audio and video signal routing

• PCMCIA cards

• Low-voltage data acquisition

•ATE

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

Notes

a. Signals on NC, NO, COM, IN, or EN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings

b. All leads welded or soldered to PC board

c. Derate 4 mW/°C above 70 °C

d. Derate 14.9 mW/°C above 70 °C

COM1

NC1

V+

Top view

NO1

GND 8

NC2

COM2

NO2

EN 6

TRUTH TABLE

LOGIC EN NC1 and NC2 NO1 and NO2

0 1 ON OFF

11OFFON

00OFFOFF

10OFFOFF

ORDERING INFORMATION

TEMP. RANGE PACKAGE PART NUMBER

-40 °C to +85 °C MSOP-10 DG2519EDQ-T1-GE3

DFN-10 DG2519EDN-T1-GE4

ABSOLUTE MAXIMUM RATINGS

PARAMETER LIMIT UNIT

Reference V+ to GND -0.3 to +6 V

IN, COM, NC, NO a-0.3 to (V+ + 0.3)

Continuous current (any terminal) ± 50 mA

Peak current (pulsed at 1 ms, 10 % duty cycle) ± 200

Storage temperature (D suffix) -65 to +150 °C

Power dissipation (packages) bMSOP-10 c320 mW

DFN-10 d1191

ESD / HBM EIA / JESD22-A114-A 7.5k V

ESD / CDM EIA / JESD22-C101-A 1.5k

Latch up JESD78 300 mA

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DG2519E

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S17-0461-Rev. A, 03-Apr-17 2Document Number: 78595

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Notes

a. Room = 25 °C, Full = as determined by the operating suffix

b. Typical values are for design aid only, not guaranteed nor subject to production testing

c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet

d. Guarantee by design, not subjected to production test

e. VIN = V+ voltage to perform proper function

f. Crosstalk measured between channels

g. Guarantee by 5 V testing

SPECIFICATIONS (V+ = 3 V)

PARAMETER SYMBOL

TEST CONDITIONS

OTHERWISE UNLESS SPECIFIED

V+ = 3 V, ± 10 %, VIN/ENL = 0.4 V, VIN/ENH = 1.5 V e

TEMP.

LIMITS

-40 °C to +85 °C UNIT

MIN. cTYP. bMAX. c

Analog Switch

Analog signal range dVANALOG Full 0 - V+ V

Drain-source on-resistance RDS(on)

V+ = 1.8 V, VNC/NO = 0.4 V / V+, INC/NO = 8 mA Room - 7 11



Full - - 13

V+ = 2.7 V, VCOM = 0.8 V / 1.8 V, ICOM = 10 mA Room - 4.6 5.5

Full - - 6.5

On-resistance matching RDS(on) V+ = 2.7 V, VCOM = 0.8 V / 1.4 V / 1.8 V,

ICOM = 10 mA

Room - 0.02 0.3

Full - - 0.6

On-resistance flatness d, f Rflat(on)

Room - 0.62 1.1

Full - - 1.5

Off leakage current gINC/NO(off) V+ = 3.6 V, VNC/NO = 1 V / 3.2 V,

VCOM = 3.2 V / 1 V, VEN = 0 V

Room -1 0.01 1

Full -5 - 5

COM off leakage current gICOM(off)

Room -1 0.01 1

Full -5 - 5

Channel-on leakage

current gICOM(on) V+ = 3.3 V, VCOM = VNC/NO = 1 V / 3.2 V Room -1 0.01 1

Full -5 - 5

Digital Control

Input current dIINL or IINH Full -1 - 1 μA

Input high voltage dVINH Full 1.5 - - V

Input low voltage dVINL Full - - 0.4

Digital input capacitance dCIN Room - 3 - pF

Dynamic Characteristics

Turn-on time tON

VNC/NO = 3 V, CL = 35 pf, RL = 300 

Room - 21 45

Full - - 50

Turn-off time tOFF

Room - 11 35

Full - - 45

Break-before-make time d t

BBM

Room 3 13 -

Full 2 - -

Charge injection dQINJ C

L = 1 nF, Vgen= 1.5 V, Rgen= 0 Room - -10.2 - pC

Bandwidth dBW CL = 5 pF (set up capacitance) Room - 222 - MHz

Off-isolation dOIRR RL = 50 , CL = 5 pF f = 1 MHz Room - -58 -

f = 10 MHz Room - -47 -

Channel-to-channel crosstalk dXTALK R

L = 50 , CL = 5 pF f = 1 MHz Room - -57 -

f = 10 MHz Room - -47 -

NO, NC Off capacitance dCNO(off)

V+ = 2.7 V, f = 1 MHz

Room - 7 -

CNC(off) Room - 7 -

Channel-on capacitance d CNO(on) Room - 24 -

CNC(on) Room - 24 -

Power Supply

Power supply range V+ 2.7 - 3.3 V

Power supply current dI+ V+ = 2.7 V, VIN = 0 V or 2.7 V Full - - 1 μA

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DG2519E

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S17-0461-Rev. A, 03-Apr-17 3Document Number: 78595

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Notes

a. Room = 25 °C, Full = as determined by the operating suffix

b. Typical values are for design aid only, not guaranteed nor subject to production testing

c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet

d. Guarantee by design, not subjected to production test

e. VIN = input voltage to perform proper function

f. Difference of min and max values

g. Guaranteed by 5 V testing.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (V+ = 5 V)

PARAMETER SYMBOL

TEST CONDITIONS

OTHERWISE UNLESS SPECIFIED

V+ = 5 V, ± 10 %, VIN/ENL = 0.5 V, VIN/ENH = 2

V e

TEMP.

LIMITS

-40 °C to +85 °C UNIT

MIN. cTYP. bMAX. c

Analog Switch

Analog signal ranged VANALOG Full 0 - V+ V

Drain-source on-resistance RDS(on) V+ = 4.5 V, VCOM = 0.8 V / 3.5 V; ICOM = 10 mA Room - 2.5 3.1



Full - - 4

On-resistance matching RDS(on) V+ = 4.5 V, VCOM = 0.8 V / 2.5 V / 3.5 V,

ICOM = 10 mA

Room - 0.01 0.4

Full - - 0.5

On-resistance flatness d, f Rflat(on) Room - 0.61 1

Full - - 1.5

Off leakage current gINC/NO(off) V+ = 5.5 V, VNC/NO = 1 V / 4.5 V,

VCOM = 4.5 V / 1 V, VEN = 0 V

Room -2 0.16 2

Full -10 - 10

COM off leakage current gICOM(off)

Room -2 0.20 2

Full -10 - 10

Channel-on leakage current gICOM(on) V+ = 5.5 V, VCOM = VNC/NO = 1 V / 4.5 V Room -2 0.20 2

Full -10 - 10

Power down leakage dIPD

V+ = 0 V, VCOM = 5.5 V, NC/NO open Full - 0.01 5 μA

V+ = 0 V, VNC/NO = 5.5 V,

COM, open Full - 0.01 3 mA

Digital Control

Input current d I

INL or IINH Full -1 - 1 μA

Input high voltage d V

INH Full 2 - - V

Input low voltage dVINL Full - - 0.5

Digital input capacitance d CIN Room - 3 - pF

Dynamic Characteristics

Turn-on time tON

VNC/NO = 3 V, CL = 35 pf, RL = 300 

Room - 14 40

Full - - 43

Turn-off time tOFF

Room - 7 33

Full - - 35

Break-before-make time d t

BBM

Room 3 8 -

Full 2 - -

Propagation delay d tpd V+ = 5 V, no RLRoom - 325 - ps

Charge injection dQINJ C

L = 1 nF, Vgen = 2.5 V, Rgen = 0 Room - -14 - pC

Bandwidth dBW CL = 5 pF (set up capacitance) Room - 217 - MHz

Off-isolation dOIRR RL = 50 , CL = 5 pF f = 1 MHz Room - -61 -

f = 10 MHz Room - -48 -

Channel-to-channel

crosstalk dXTALK R

L = 50 , CL = 5 pF f = 1 MHz Room - -61 -

f = 10 MHz Room - -48 -

NO, NC Off capacitance dCNO(off)

V+ = 5 V, f = 1 MHz

Room - 7 -

CNC(off) Room - 7 -

Channel-On capacitance d CNO(on) Room - 24 -

CNC(on) Room - 24 -

Power Supply

Power supply range V+ 4.5 - 5.5 V

Power supply current d I+ V+ = 5.5 V, VIN = 0 V or 5.5 V Full - - 1 μA

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DG2519E

www.vishay.com Vishay Siliconix

S17-0461-Rev. A, 03-Apr-17 4Document Number: 78595

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

RON vs. VCOM and Single Supply Voltage

RON vs. Analog Voltage and Temperature

Supply Current vs. Temperature

Positive Supply Current vs. Switching Frequency

Switching Time vs. Temperature

100

1000

10000

012345

Axis Title

1st line

2nd line

RON - On-Resistance (Ω)

VCOM - Analog Voltage (V)

2nd line

V+ = +1.8 V

V+ = +2.7 V

V+ = +3 V

V+ = +4.5 V

V+ = +5 V

IS= 10 mA

100

1000

10000

0 0.5 1 1.5 2 2.5 3

Axis Title

1st line

2nd line

RON - On-Resistance (Ω)

VCOM - Analog Voltage (V)

2nd line

+85 °C

+25 °C

-40 °C

V+ = +2.7 V

IS= 10 mA

100

1000

10000

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Axis Title

1st line

2nd line

RON - On-Resistance (Ω)

VCOM - Analog Voltage (V)

2nd line

+85 °C

+25 °C

-40 °C

V+ = +4.5 V

= 10 mA

100

1000

10000

-40-20 0 20406080100

Axis Title

1st line

2nd line

I+ - Supply Current (nA)

Temperature (°C)

2nd line

V+ = +2.7 V

V+ = +5.5 V

IN/EN

= V+

100

1000

10000

0.00001

0.0001

0.001

0.01

0.1

100

1000

10 100 1000 10K 100K 1M 10M

Axis Title

1st line

2nd line

I+ - Supply Current (μA)

VIN/EN Switching Frequency (Hz)

2nd line

V+ = +5 V

V+ = +2.7 V

100

1000

10000

-50-25 0 255075100

Axis Title

1st line

2nd line

tON(EN), tOFF(EN) - Switching Time (ns)

Temperature (°C)

2nd line

V+ = +3 V, tON

V+ = +3 V, tOFF

V+ = +5 V, tON

V+ = +5 V, tOFF

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DG2519E

www.vishay.com Vishay Siliconix

S17-0461-Rev. A, 03-Apr-17 5Document Number: 78595

For technical questions, contact: analogswitchtechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Switching Time vs. Temperature

Switching Threshold vs. Supply Voltage

Charge Injection vs. Source Voltage

Leakage Current vs. Temperature

Leakage Current vs. Analog Voltage

100

1000

10000

-50-25 0 255075100

Axis Title

1st line

2nd line

tBBM - Switching Time (ns)

Temperature (°C)

2nd line

V+ = +5 V

V+ = +3 V

100

1000

10000

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

123456

Axis Title

1st line

2nd line

VT- Switching Threshold (V)

V+ - Supply Voltage (V)

2nd line

-40 °C to +85 °C

VIH =-40 °C

VIL = 85 °C

100

1000

10000

-40.0

-30.0

-20.0

-10.0

10.0

20.0

0123456

Axis Title

1st line

2nd line

QINJ - Charge Injection (pC)

VS- Analog Voltage (V)

2nd line

V+ = 5 V

V+ = 3 V

V+ = 1.8 V

100

1000

10000

-4000

-3000

-2000

-1000

1000

-40-200 20406080100

Axis Title

1st line

2nd line

Leakage Current (pA)

Temperature (°C)

2nd line

ICOM(OFF),V

COM = 4.5 V, VNC/NO = 1 V

ICOM(ON),V

COM/NC/NO = 4.5 V

INC/NO(OFF),V

COM = 1 V, VNC/NO = 4.5 V

INC/NO(OFF),V

COM = 4.5 V, VNC/NO = 1 V

ICOM(ON),V

COM/NC/NO = 1 V

ICOM(OFF),V

COM = 1 V, VNC/NO = 4.5 V

V+ = +5.5 V

100

1000

10000

-600

-500

-400

-300

-200

-100

100

-40-20 0 20406080100

Axis Title

1st line

2nd line

Leakage Current (pA)

Temperature (°C)

2nd line

COM(OFF)

COM

= 3.2 V, V

NC/NO

= 1 V

ICOM(ON),V

COM/NC/NO = 3.2 V

INC/NO(OFF),V

COM = 1 V, VNC/NO = 3.2 V

INC/NO(OFF),V

COM = 3.2 V, VNC/NO = 1 V

ICOM(ON),V

COM/NC/NO = 1 V

ICOM(OFF),V

COM = 1 V, VNC/NO = 3.2 V

V+ = +3.6 V

-4000

-3000

-2000

-1000

1000

2000

0123456

Leakage Current (pA)

VD - Analog Voltage (V)

INC/NO(off)

V+ = +5.5 V

ICOM(off)

ICOM(on)

— VISHAY. V Com/605791000

DG2519E

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S17-0461-Rev. A, 03-Apr-17 6Document Number: 78595

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Loss, OIRR, XTALK vs. Frequency Positive Supply Current vs. Logic Voltage

TEST CIRCUITS

Fig. 1 - Switching Time

Fig. 2 - Break-Before-Make Interval

100

1000

10000

-70

-60

-50

-40

-30

-20

-10

100K 1M 10M 100M 1G

Axis Title

1st line

2nd line

Loss, OIRR, XTALK (dB)

Frequency (Hz)

2nd line

OIRR

V+ = +5 V

Loss

XTALK

100

1000

10000

0.001

0.01

0.1

100

1000

10 000

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Axis Title

1st line

2nd line

I+ - Supply Current (μA)

VIN/EN (V)

2nd line

V+ = 2.7 V

V+ = 5 V

Switch

Input

CL (includes fixture and stray capacitance)

V+

NO or NC

35 pF

COM

Logic

Input

50 

VOUT

GND

V+

50 %

0 V

Logic

Input

Switch

Output

tON tOFF

Logic "1" = Switch On

Logic input waveforms inverted for switches that have

the opposite logic sense.

0 V

Switch Output

0.9 x VOUT

tr < 5 ns

tf < 5 ns

VINH

VINL

VOUT =V

COM

RL+R

CL (includes fixture and stray capacitance)

VNO

VNC

0 V

Logic

Input

Switch

Output

VNC = VNO

tr < 5 ns

tf < 5 ns

90 %

tDtD

COM

V+

GND

V+

35 pF

50 

VINL

VINH

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DG2519E

www.vishay.com Vishay Siliconix

S17-0461-Rev. A, 03-Apr-17 7Document Number: 78595

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TEST CIRCUITS

Fig. 3 - Charge Injection

Fig. 4 - Off-Isolation Fig. 5 - Channel Off/On Capacitance

Fig. 6 - Source / Drain Power Down Leakage



Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?78595.

Off OnOn

VOUT

VOUT

Q = VOUT x CL

CL = 1 nF

Rgen

VOUT

COM

VIN = 0 - V+

Vgen

GND

V+

IN depends on switch configuration: input polarity

determined by sense of switch.

NC or NO

GND

NC or NO

0 V, 2.4 V

10 nF

COM

Off Isolation = 20 log

COM

NO/ NC

Analyzer

V+

COM

NC or NO

f = 1 MHz

COM

GND

0 V, 2.4 V

Meter

HP4192A

Impedance

Analyzer

or Equivalent

10 nF

V+

5.5 V A

NC, NO, Sx

V+

GND

COM

5.5 V

NC, NO, Sx

V+

GND

COM

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NOTES:

1. Die thickness allowable is 0.203"0.0127.

2. Dimensioning and tolerances per ANSI.Y14.5M-1994.

3. Dimensions “D” and “E1” do not include mold flash or protrusions, and are

measured at Datum plane -H- , mold flash or protrusions shall not exceed

0.15 mm per side.

4. Dimension is the length of terminal for soldering to a substrate.

5. Terminal positions are shown for reference only.

6. Formed leads shall be planar with respect to one another within 0.10 mm at

seating plane.

7. The lead width dimension does not include Dambar protrusion. Allowable

Dambar protrusion shall be 0.08 mm total in excess of the lead width

dimension at maximum material condition. Dambar cannot be located on the

lower radius or the lead foot. Minimum space between protrusions and an

adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”.

8. Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip.

9. Controlling dimension: millimeters.

10. This part is compliant with JEDEC registration MO-187, variation AA and BA.

11. Datums -A- and -B- to be determined Datum plane -H- .

12. Exposed pad area in bottom side is the same as teh leadframe pad size.

N N-1 A B C 0.20

(N/2) Tips)

N/221

0.60

0.50

0.60

Top View

See Detail “B”

-H-

D-A-

Seating Plane

C0.10

Side View

0.25

BSC

L-C-

Seating Plane

0.07 R. Min

2 Places

Parting Line

Detail “A”

(Scale: 30/1)

0.48 Max

Detail “B”

(Scale: 30/1)

Dambar Protrusion

C0.08 MBSAS

With Plating

Base Metal

c1c

Section “C-C”

Scale: 100/1

(See Note 8)

See Detail “A”

A20.05 S

E1-B-

End View

0.95

Package Information

Vishay Siliconix

Document Number: 71245

12-Jul-02 www.vishay.com

MSOP: 10−LEADS

JEDEC Part Number: MO-187, (Variation AA and BA)

N = 10L

MILLIMETERS

Dim Min Nom Max Note

A- - 1.10

A10.05 0.10 0.15

A20.75 0.85 0.95

b0.17 - 0.27 8

b10.17 0.20 0.23 8

c0.13 - 0.23

c10.13 0.15 0.18

D3.00 BSC 3

E4.90 BSC

E12.90 3.00 3.10 3

e0.50 BSC

e12.00 BSC

L0.40 0.55 0.70 4

N10 5

T0_4_6_

ECN: T-02080—Rev. C, 15-Jul-02

DWG: 5867

tum .mm VISHAY UJL'J mm ”MA was TOP WEW A L;;;;;_i BOTTOM WEW SIDE VIEW AAA

BOTTOM VIEW

NOTES:

1. All dimensions are in millimeters and inches.

2. N is the total number of terminals.

3. Dimension b applies to metallized terminal and is measured

between 0.15 and 0.30 mm from terminal tip.

4. Coplanarity applies to the exposed heat sink slug as well as the

terminal.

5. The pin #1 identifier may be either a mold or marked feature, it

must be located within the zone iindicated.

D/2

E/2

TOP VIEW

SEATING

PLANE

A3A1

SIDE VIEW

C0.08

C0.10//

4NX

3Terminal Tip

C0.10 MA B

NXb

Exposed Pad

NXL

Index Area

D/2 E/2

Index Area

D/2 E/2

5C0.15 2x

C0.15 2x

Package Information

Vishay Siliconix

Document Number: 73181

29-Nov-04 www.vishay.com

DFN-10 LEAD (3 X 3)

MILLIMETERS INCHES

Dim Min Nom Max Min Nom Max

A0.80 0.90 1.00 0.031 0.035 0.039

A1 0.00 0.02 0.05 0.000 0.001 0.002

A3 0.20 BSC 0.008 BSC

b0.18 0.23 0.30 0.007 0.009 0.012

D3.00 BSC 0.118 BSC

D2 2.20 2.38 2.48 0.087 0.094 0.098

E3.00 BSC 0.118 BSC

E2 1.49 1.64 1.74 0.059 0.065 0.069

e0.50 BSC 0.020 BSC

L0.30 0.40 0.50 0.012 0.016 0.020

*Use millimeters as the primary measurement.

ECN: S-42134—Rev. A, 29-Nov-04

DWG: 5943

— VISHAY. V

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Revision: 08-Feb-17 1Document Number: 91000

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DG2519E Datasheet by Vishay Siliconix

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