MCO150-12IO1 Datasheet by IXYS

Single Thyristor “X E72673
MCO150-12io1
Single Thyristor
Thyristor
3 1/4
2
Part number
MCO150-12io1
Backside: isolated
TAV
T
V V1,37
RRM
158
1200
=
V=V
I=A
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
SOT-227B (minibloc)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20150827bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
L-I IXYS MCO150-12io1 Symbol Delinikion Condikions min. lyp. max. iUniI
MCO150-12io1
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1,37
R0,2 K/W
min.
158
VV
100T = 25°C
VJ
T = °C
VJ
mA10V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
80
P
tot
620 WT = 25°C
C
150
1200
forward voltage drop
total power dissipation
Unit
1,78
T = 25°C
VJ
125
V
T0
V0,84T = °C
VJ
150
r
T
3,5 mΩ
V1,37T = °C
VJ
I = A
T
V
150
1,89
I = A300
I = A300
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1200T = 25°C
VJ
IA250
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0,5
average gate power dissipation
C
J
119
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
2,00
2,16
14,5
14,0
kA
kA
kA
kA
1,70
1,84
20,0
19,4
1200
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 150 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 150°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
450 A
T
P
G
= 0,45
di /dt A/µs;
G
=0,45
DRM
cr
V = ⅔ V
DRM
GK
1000
1,4 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
150 mA
T = °C-40
VJ
1,6 V
200 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0,2 V
I
GD
gate non-trigger current
10 mA
V = ⅔ V
D DRM
150
latching current
T = °C
VJ
450 mA
I
L
25t µs
p
=10
I A;
G
= 0,45 di /dt A/µs
G
= 0,45
holding current
T = °C
VJ
200 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0,45 di /dt A/µs
G
= 0,45
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs15
V =
R
100 V; I A;
T
= 150 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 150 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
1300
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0,10
IXYS reserves the right to change limits, conditions and dimensions. 20150827bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
IXYS MCO150-12io1 SOT-227B (minibloc) Symbol Delinikion Condifions min. lyp. max. iUni! n 1 Product Marking _-_ _-_ M II II T T
MCO150-12io1
1)
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Ratings
abcdZyyww
XXXXX
Product Marking
Logo
Part No.
DateCode
Assembly Code
Assembly Line
®
Package
T
op
°C
M
D
Nm1,5
mounting torque
1,1
T
VJ
°C150
virtual junction temperature
-40
Weight g30
Symbol
Definition
typ.
max.
min.
operation temperature
Unit
M
T
Nm1,5
terminal torque
1,1
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10,5 3,2
8,6 6,8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
150 A
per terminal
125-40
terminal to terminal
SOT-227B (minibloc)
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
1)
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCO150-12io1 496332Tube 10MCO150-12io1Standard
3000
ISOL
T
stg
°C150
storage temperature
-40
2500
threshold voltage
V0,84
mΩ
V
0 max
R
0 max
slope resistance *
1,6
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20150827bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
MIIIWEBY Imna m lm m rm 31.50 31 BB 1 240 1.255 7.80 8 20 0 307 0.323 4.00 4.29 0131 0.100 4.05 4 25 0101 0.155 4.05 4 25 0101 0.155 14.51 15.11 087 0555 30,12 30 30 1 186 1,153 37.80 38 23 1.488 1.505 11.80 12.22 0460 0401 8.52 5 00 0351 0.378 0.74 0 B4 0 025 0.033 12.50 13.10 0402 0.510 25.15 25 42 0 550 1.001 1.55 213 0 077 0.084 4.05 6.20 0105 0244 26.54 26 50 1 045 1 055 3.54 4.42 0155 0167 4.55 4.05 0170 0101 24,55 25 25 0508 0 554 -0 05 010 -0.002 0.004 3.20 5.50 0125 0.217 15.81 21 DB 0780 0.830 2 50 2 70 0058 0.100 J Nuzm DIN 9134 Lens Head - K - Screw MM 2 0m 7985 E N§
MCO150-12io1
3 1/4
2
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20150827bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
L-I IXYS MCO150-12io1
MCO150-12io1
0,01 0,1 1
600
800
1000
1200
1400
1600
18
0
0
0,4 0,8 1,2 1,6 2,0
0
50
100
150
200
250
3
00
10
0
10
1
10
2
10
3
10
4
0,00
0,05
0,10
0,15
0,20
I
TSM
[A]
I
T
[A]
V
T
[V]
t [ms]
Z
thJC
[K/W]
2 3 4 5 6 7 8 9 011
0
5000
10000
15000
20000
25
0
00
I
2
t
[A
2
s]
t [ms]
I
T(AV)M
[A]
T
C
[°C]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
Fig. 1 Forward characteristics Fig. 3 I
2
t versus time (1-10 ms)
t [s]
Fig. 6 Max. forward current
at case temperature
Fig. 2 Surge overload current
Fig. 8 Transient thermal impedance junction to case
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
= 45°C
V
R
= 0 V
125°C
150°C
0 40 80 120 160 200
0
50
100
150
200
250
300
350
I
T(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 50 100 150
T
amb
[°C]
dc =
1
0.5
0.4
0.33
0.17
0.08
10 100 1000
1
10
100
1000
1 10 100 1000 10000
0,1
1
10
I
G
[mA]
V
G
[V]
t
gd
[µs]
I
G
[mA]
typ. Limit
T
VJ
= 125°C
Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time
dc =
1
0.5
0.4
0.33
0.17
0.08
6
4
5
2
1
3
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
1: I
GD
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
I
GD
, T
VJ
= 125°C
R
thHA
0.1
0.2
0.4
0.6
0.8
1.0
R
thi
[K/W] t
i
[s]
0.020 0.030
0.023 0.003
0.032 0.050
0.043 0.250
0.082 0.170
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20150827bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved