DG458,459 Datasheet by Vishay Siliconix

Vishay Siliconix
DG458, DG459
Document Number: 70064
S11-1029–Rev. H, 23-May-11
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Fault-Protected Single 8-Ch/Differential 4-Ch Analog Multiplexers
FEATURES
• Fault and Overvoltage Protection
• All Channels Off When Power Off
• Latchup-Proof
• Fast Switching - tA: 200 ns
• Break-Before-Make Switching
• Low On-Resistance: 180 W
• Low Power Consumption: 3 mW
• TTL and CMOS Compatible Inputs
BENEFITS
• Improved Ruggedness
• Power Loss Protection
• Prevents Adjacent Channel Crosstalk
• Standard Logic Interface
• Superior Accuracy
• Fast Settling Time
APPLICATIONS
• Data Acquisition Systems
• Industrial Process Control Systems
• Avionics Test Equipment
• High-Rel Control Systems
• Telemetry
DESCRIPTION
The DG458 and DG459 are 8-channel single-ended and
4-channel differential analog multiplexers, respectively,
incorporating fault protection. A series n-p-n MOSFET
structure provides device and signal-source protection in the
event of power loss or overvoltages. Under fault conditions
the multiplexer input (or output) appears as an open circuit
and only a few nanoamperes of leakage current will flow.
This protects not only the multiplexer and the circuitry
following it, but also protects the sensors or signal sources
which drive the multiplexer.
The DG458 and DG459 can withstand continuous
overvoltage inputs up to ± 35 V. All digital inputs have TTL
compatible logic thresholds. Break-before-make operation
prevents channel-to-channel interference.
The DG458 and DG459 are improved pin-compatible
replacements for HI-508A/509A and MAX358/359
multiplexers.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
* Pb containing terminations are not RoHS compliant, exemptions may apply
S3
A0
S6
D
S4
A1
S8
S7
EN
Dual-In-Line
A2
V- GND
S1V+
S2S5
Decoders/Drivers
1
2
3
4
5
6
7
16
15
14
13
12
11
10
Top View
89
DG458
9
A0
Da
A1
Db
EN GND
V- V+
S1a S1b
S2a S2b
S3a S3b
S4a S4b
Dual-In-Line
Decoders/Drivers
1
2
3
4
5
6
7
16
15
14
13
12
11
10
Top View
8
DG459
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Document Number: 70064
S11-1029–Rev. H, 23-May-11
Vishay Siliconix
DG458, DG459
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THRU TABLES AND ORDERING INFORMATION
Logic "0" = VAL 0.8 V
Logic "1" = VAH 2.4 V
X = Don’t Care
Notes:
a. All leads soldered or welded to PC board.
b. Derate 6.3 mW/°C above 75 °C.
c. Derate 12 mW/°C above 75 °C.
d. Derate 10 mW/°C above 75 °C.
TRUTH TABLE - DG458
A2 A
1 A
0 EN On Switch
X X X 0 None
0 0 0 1 1
0 0 1 1 2
0 1 0 1 3
0 1 1 1 4
1 0 0 1 5
1 0 1 1 6
1 1 0 1 7
1 1 1 1 8
TRUTH TABLE - DG459
A1 A
0 EN On Switch
X X 0 None
0 0 1 1
0 1 1 2
1 0 1 3
1 1 1 4
ORDERING INFORMATION
Temp Range Package Part Number
- 40 to 85 °C 16-pin Plastic DIP
DG458DJ
DG458DJ-E3
DG459DJ
DG459DJ-E3
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
V+ to V- 44
V
V+ to GND 22
V- to GND - 25
VEN, VA Digital Input (V-) - 4 to (V+) + 4
VS, Analog Input Overvoltage with Power On (V-) - 20 to (V+) + 20
VS, Analog Input Overvoltage with Power Off - 35 to + 35
Continuous Current, S or D 20 mA
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max) 40
Storage Temperature (AK Suffix) - 65 to 150 °C
(DJ Suffix) - 65 to 125
Power Dissipation (Package)a
16-pin Plastic DIPB600
mW
16-pin CerDIPC1000
LCC-20d1000
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S11-1029–Rev. H, 23-May-11
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Vishay Siliconix
DG458, DG459
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SPECIFICATIONSa
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VAL = 0.8 V, VAH = 2.4 VfTemp.b Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.d Max.dMin.d Max.d
Analog Switch
Analog Signal RangeeVANALOG Full - 10 10 - 10 10 V
Drain-Source
On-Resistance RDS(on)
VD = ± 9.5 V, IS = - 400 µA Room
Full
0.45 1.2
1.5
1.5
1.8 k
VD = ± 5 V, IS = - 400 µA Room 180 400 400
RDS(on) Matching Between ChannelshRDS(on) VD = 0 V, IS = - 400 µA Room 6 %
Source Off Leakage Current IS(off)
VEN = 0 V, VD = ± 10 V
VS = ± 10 V
Room
Full
0.03 - 0.5
- 50
0.5
50
- 1
- 20
1
20
nA
Drain Off Leakage Current ID(off)
VEN = 0 V
VD = ± 10 V
VS = ± 10 V
DG458 Room
Full
0.1 - 1
- 200
1
200
- 1
- 50
1
50
DG459 Room
Full
0.1 - 1
- 100
1
100
- 2
- 25
2
25
Differential Off Drain
Leakage Current IDIFF DG459 Only Room - 50 50 - 20 20
Drain On Leakage Current ID(on) VS = VD = ± 10 V
DG458 Room
Full
0.1 - 2
- 200
2
200
- 5
- 50
5
50
DG459 Room
Full
0.05 - 2
- 100
2
100
- 5
- 25
5
25
Fault
Output Leakage Current
(with Overvoltage) ID(off)
VS = ± 33 V, VD = 0 V
See Figure 1 Room 0.02 nA
Input Leakage Current
(with Overvoltage) IS(off)
VS = ± 25 V, VD = 10 V,
See Figure 1 Room 0.005 - 5 5 - 10 10
µA
Input Leakage Current
(with Power Supplies Off)
VS = ± 25 V, VSUPS = 0 V
VD = A0, A1, A2, EN = 0 V Room 0.001 - 2 2 - 5 5
Digital Control
Input Low Threshold VAl Full 0.8 0.8 V
Input Low Threshold VAL Full 2.4 2.4
Logic Input Control IAVA = 2.4 V or 0.8 V Full - 1 1 - 1 1 µA
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Document Number: 70064
S11-1029–Rev. H, 23-May-11
Vishay Siliconix
DG458, DG459
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Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. When the analog signal exceeds the + 13.5 V or - 12 V,RDS(on) starts to rise until only leakage currents flow.
RDS(on) MAX - RDS(on) MIN
(
RrDS(on) AVE
)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VAL = 0.8 V, VAH = 2.4 VfTemp.b Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.d Max.dMin.d Max.d
Dynamic Characteristics
Transition Time tASee Figure 3 Room 200 500 500
ns
Break-Before-Make Interval tOPEN See Figure 4 Room 45 10 10
Enable Turn-On Time tON(EN)
See Figure 5
Room
Full
140 250
500
250
500
Enable Turn-Off Time tOFF(EN) Room
Full
50 250
500
250
500
Settling Time ts
To 0.1 % Room 0.5 µs
To 0.01 % Room 1.5
Off Isolation OIRR
VEN = 0 V, RL = 1 k
CL = 15 pF, VS = 3 VRMS
f = 100 kHz
Room 90 dB
Logic Input Capacitance Cin f = 1 MHz Room 5
pF
Source Off Capacitance CS(off) Room 5
Drain Off Capacitance CD(off)
DG458 Room 15
DG459 Room 10
Drain On Capacitance CD(on)
DG458 Room 40
DG459 Room 35
Power Supplies
Positive Supply Current I+
VEN = 5 or 0 V, VA = 0 V
Room
Full
0.05 0.1
0.2
0.1
0.2 mA
Negative Supply Current I- Room
Full
- 0.01 - 0.1
- 0.2
- 0.1
- 0.2
Power Supply Range for
Continuous Operation Room ± 4.5 ± 18 ± 4.5 ± 18 V
x 100 %
h. RDS(on) =
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DG458, DG459
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Input Leakage vs. Input Voltage
Off-Channel Leakage Currents vs. Input Voltage
Output Leakage vs. Off-Channel Overvoltage
V
S
– Source V oltage (V)
– Source Current
I S
- 50 0 5 0
1 mA
100 µA
10 µA
1 µA
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
- 40 - 30 - 20 - 10 10 20 30 40
Operating Range
V+ = V- = 0 V
– Source Current
I S
V
S
– Source V oltage (V)
- 50 0 5 0- 40 - 30 - 20 - 10 10 20 30 40
Operating Range
V+ = 15 V
V- = - 15 V
1 mA
100 µA
10 µA
1 µA
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
– Drain Current
ID
VS – Source Voltage (V)
1 nA
0.1 pA
- 50 - 40 50
100 pA
10 pA
1 pA
- 30 - 20 - 10 0 10 20 30 40
V+ = 15 V
V- = - 15 V
RDS(on) vs. VD and Temperature
Leakage Currents vs. Temperature
RDS(on) vs. Input Voltage
V
D
– Drain V oltage (V)
700
- 10 0 1 0
600
500
400
0
300
200
100
5.0 - 5.0 2.5 - 2.5 - 7.5 7.5
125 °C
- 55 °C
V+ = 15 V
V- = - 15 V
85 °C
25 °C
0 °C
R
DS(on)
– Drain-Source On-Resistance ( )
(nA)I , I
SD
Temperature (°C)
10
- 55 - 35 125
1
0.10
0.01
- 15 5 25 45 65 85 105
IS(off)
ID(on)
V+ = 15 V
V- = - 15 V
VS, VD = ± 10 V
ID(off)
V
S
– Source V oltage (V)
2000
400
0
0 25
20 15 10 5 - 20 - 15 - 10 - 5
800
1200
1600
±5 V
Supplies
± 10 V
± 15 V
± 20 V
RDS(on) Drain-Source On-Resistance ( )
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Document Number: 70064
S11-1029–Rev. H, 23-May-11
Vishay Siliconix
DG458, DG459
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Leakage Current vs. VS, VD
Switching Times (tTRANS, tON, tOFF) vs. ± VSUPPLIES
Switching Times vs. Temperature
SD
– Leakage (pA)I, I
VD or VS – Drain or Source Voltage (V)
25
- 15
- 25
115
12963- 12 - 9 - 6 - 3
- 5
5
15
- 15
20
- 20
- 10
0
10
ID(on)
IS(off)
ID(off)
V+ = 15 V
V- = - 15 V
T ime (ns)
V+, V- – Positive and Negative Supplies (V)
240
200
160
120
80
40
± 5 ± 10 ± 15 ± 20
t
TRA N S
t
ON(E N)
t
OFF(E N )
V
IN
= 2 V
Off Isolation and XTALK vs. Frequency
QINJ vs. VS
Logic Input Switching Threshold vs. ± VSUPPLIES
f – Frequency (Hz)
(dB)
- 110
10 k 100 k 10 M
- 100
- 90
- 50
- 80
- 70
- 60
1 M
V+ = 15 V
V- = - 15 V
RL = 1 kΩ
Off Isolation
Crosstalk
VS – Source Voltage (V)
Charge Injection (pC)
0
- 10
- 30
- 40
- 60
- 10 - 5 0 5 10
- 50
- 20
V+ = 15 V
V- = - 15 V
CL = 1 nF
CL = 10 nF
V+, Supply (V)
(V)
TH
V
2.5 5 7.5 10 12.5 15 17.5 20
3.0
2.0
1.5
1.0
0.5
0
2.5
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DG458, DG459
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SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
TEST CIRCUITS
GND
S1
A0
D
Sn
V-
Decode/
Drive
Level
Shift
V-
V+
VREF
V+
V-
AX
EN
V+
V-
V+
Figure 2. Analog Input Overvoltage
A
+ 15 V
ID(off)
VD
D
V+
V-
- 15 V
Sn
± VS
IS(off)
A
Figure 3. Transition Time
S1b
S8b
A2
Db
A1
*
A0
* = S1a - S 8a, S2b - S 7b, Da
50 Ω 1 MΩ
VO
±5 V
± 5 V
+ 2.4 V
+ 15 V
- 15 V
EN V+
V-GND
35 pF
50 %
+ 5 V
- 5 V
90 %
0 V
3 V
Logic
Input
tA
Switch
Output
VO
DG458
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Document Number: 70064
S11-1029–Rev. H, 23-May-11
Vishay Siliconix
DG458, DG459
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TEST CIRCUITS
Figure 4. Break-Before-Make Time
A2Db, D
S2 - S 7
1 kΩ
VO
A1
50 Ω
A0
EN V+
GND V-
35 pF
- 15 V
+ 15 V
+ 2.4 V
DG458
Logic
Input
tOPEN
0 V
3 V
50 %
0 V
VO
Switch
Output
S1, S8+ 5 V
Figure 5. Enable Delay
S1
S2 - S 8
A0
A1
A2
50 Ω 1 kΩ
VO
EN
V+
GND V- D
35 pF
- 15 V
+ 15 V
DG458
0 V
3 V
0 V
90 %
50 %
Enable
Input
VO
Switch
Output
VS
tON(EN) tOF
+ 5 V
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DG458, DG459
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DETAILED DESCRIPTION
The Vishay Siliconix DG458 and DG459 multiplexers are
fully fault- and overvoltage-protected for continuous input
voltages up to ± 35 V whether or not voltage is applied to the
power supply pins (V+, V-). These multiplexers are built on a
high-voltage junction-isolated silicon-gate CMOS process.
Two n-channel and one p-channel MOSFETs are connected
in series to form each channel (Figure 1).
Within the normal analog signal range (± 10 V), the RDS(on)
variation as a function of analog signal voltage is comparable
to that of the classic parallel N-MOS and P-MOS switches.
When the analog signal approaches or exceeds either
supply rail, even for an on-channel, one of the three series
MOSFETs gets cut-off, providing inherent protection against
overvoltages even if the multiplexer power supply voltages
are lost. This protection is good up to the breakdown voltage
of the respective series MOSFETs. Under fault conditions
only sub microamp leakage currents can flow in or out of the
multiplexer. This not only provides protection for the
multiplexer and succeeding circuitry, but it allows normal,
undisturbed operation of all other channels. Additionally, in
case of power loss to the multiplexer, the loading caused on
the transducers and signal sources is insignificant, therefore
redundant multiplexers can be used on critical applications
such as telemetry and avionics.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70064.
Figure 5. Overvoltage Protection
- 15 V - 15 V+ 15 V
- 35 V
Overvoltage
+ 35 V
Overvoltage
Q1Q2Q3
n-Channel
MOSFET
is On
p-Channel
MOSFET
is Off
n-Channel
MOSFET
is Off
- 15 V + 15 V
DS
G
DS
G
DS
G
- 35 V
Overvoltage
+ 35 V
Overvoltage
Q1Q2Q3
- 35 V
n-Channel
MOSFET
is On
p-Channel
MOSFET
is Off
n-Channel
MOSFET
is Off
(b) Overvoltage with Multiplexer Power On
(a) Overvoltage with Multiplexer Power Off
- VISHAY
E1E
Q1
A
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A1
e1B
B1
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15°
MAX
12345678
16 15 14 13 12 11 10 9
Package Information
Vishay Siliconix
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PDIP: 16ĆLEAD
MILLIMETERS INCHES
Dim Min Max Min Max
A3.81 5.08 0.150 0.200
A10.38 1.27 0.015 0.050
B0.38 0.51 0.015 0.020
B10.89 1.65 0.035 0.065
C0.20 0.30 0.008 0.012
D18.93 21.33 0.745 0.840
E7.62 8.26 0.300 0.325
E15.59 7.11 0.220 0.280
e12.29 2.79 0.090 0.110
eA7.37 7.87 0.290 0.310
L2.79 3.81 0.110 0.150
Q11.27 2.03 0.050 0.080
S0.38 1.52 .015 0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
- VISHAY E&&&&&&xfli, EWWWWWWH '
E1E
Q1
A
L
A1
e1B
B1
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16 15 14 13 12 11 10 9
Package Information
Vishay Siliconix
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CERDIP: 16ĆLEAD
MILLIMETERS INCHES
Dim Min Max Min Max
A4.06 5.08 0.160 0.200
A10.51 1.14 0.020 0.045
B0.38 0.51 0.015 0.020
B11.14 1.65 0.045 0.065
C0.20 0.30 0.008 0.012
D19.05 19.56 0.750 0.770
E7.62 8.26 0.300 0.325
E16.60 7.62 0.260 0.300
e12.54 BSC 0.100 BSC
eA7.62 BSC 0.300 BSC
L3.18 3.81 0.125 0.150
L13.81 5.08 0.150 0.200
Q11.27 2.16 0.050 0.085
S0.38 1.14 0.015 0.045
∝0°15°0°15°
ECN: S-03946—Rev. G, 09-Jul-01
DWG: 5403
D
L1
E
BL
e
A1
A
28
1
2
Packaging Information
Vishay Siliconix
Document Number: 71290
02-Jul-01 www.vishay.com
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20ĆLEAD LCC
MILLIMETERS INCHES
Dim Min Max Min Max
A1.37 2.24 0.054 0.088
A11.63 2.54 0.064 0.100
B0.56 0.71 0.022 0.028
D8.69 9.09 0.342 0.358
E8.69 9.09 0.442 0.358
e1.27 BSC 0.050 BSC
L1.14 1.40 0.045 0.055
L11.96 2.36 0.077 0.093
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5321
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.