BSP603S2LNT Infineon Technologies | Discrete Semiconductor Products

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BSP603S2LNT
DigiKey Part Number	2156-BSP603S2LNT-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	BSP603S2LNT
Description	N-CHANNEL POWER MOSFET
Customer Reference
Detailed Description	N-Channel 55 V 5.2A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	33mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id	2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1390 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4-21
Package / Case	TO-261-4, TO-261AA