FCPF22N60NT Super-Junction SupreMOS MOSFETs
onsemi introduce 600 V N-channel MOSFETs that enable power supplies to meet ENERGY STAR® 80 PLUS Gold or Platinum specifications
onsemi brings designers of power supplies, lighting, display, and industrial applications a new generation of 600 V Super-Junction SupreMOS MOSFETs. The combination of their low RDS(ON) and total gate charge brings a 40% lower figure of merit (FOM) compared to onsemi's 600 V SuperFET™ MOSFETs. These devices offer best-in-class reverse recovery characteristics di/dt and dv/dt bringing higher reliability for resonant converter, LLC and phase-shifted full-bridge topologies found in switch mode power supply (SMPS) designs.
Compared to SuperFET MOSFETs, these 600 V super-junction MOSFETs offer a low gate charge for the same RDS(ON), offering excellent switching performance and delivering 20% less switching and conduction losses, resulting in higher efficiency. They provide low input and output capacitances, improving efficiency at light load conditions. These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.
- RDS(on) = 0.140 µ ( Typ) at VGS = 10 V, ID = 11 A
- BVDSS>650 V at TJ = +150°C
- Ultra low gate charge ( Typ Qg = 45 nC)
- Low effective output capacitance
- 100% avalanche tested

