ISSI, Integrated Silicon Solution Inc.

LPDDR4/4X Mobile SDRAM

ISSI’s LPDDR4/4X use a double-data-rate architecture to achieve high-speed operation

Image of ISSI's LPDDR4/4X Mobile SDRAMISSI’s LPDDR4 and LPDDR4X are low-voltage memory devices available in 2 Gb, 4 Gb, and 8 Gb densities. The devices are organized as 1/2 channels per device and each channel is eight banks and 16-bits. The LPDDR4 and LPDDR4X use a double-data-rate architecture to achieve high-speed operation. The double-data-rate architecture is essentially a 16N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins.

The LPDDR4 and LPDDR4X offer fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 16n-bits prefetched to achieve very high bandwidth. Both the LPDDR4 and LPDDR4X feature programmable read and write latencies in programmable and on-the-fly burst lengths. The low-voltage cores and I/O of these devices make them ideal for mobile applications.

Features
  • Low-voltage
    • LPDDR4: 1.8 V
    • LPDDR4X: 1.1 V
  • Low voltage I/O
    • LPDDR4: 1.1 V
    • LPDDR4X: 0.6 V
  • 10 MHz to 1600 MHz frequency range
  • 20 Mbps to 3200 Mbps per I/O data rate
  • 16N prefetch DDR architecture
  • Eight internal banks per channel for concurrent operation
  • Multiplexed, double-data-rate, command/address inputs
  • Mobile features for lower power consumption
  • Programmable and on-the-fly burst length (BL=16 or 32)
  • Programmable read and write latencies
  • On-chip temperature sensor for efficient self-refresh control
  • ZQ calibration
  • Adjustable drive strength
  • Partial array self-refresh (PASR)
  • 10 mm x 14.5 mm BGA-200 package
  • Clock frequency: 1.6 GHz
  • Memory format: DRAM
  • Memory interface: parallel
  • Memory type: volatile
  • Mounting type: surface mount
  • Operating temperature: -40°C to 95°C (TC)
  • Package/case: 200-TFBGA to 200-WFBGA
  • Technology: SDRAM mobile LPDDR4
  • Supply voltage: 1.06 V to 1.17 V, 1.7 V to 1.95 V
Applications
  • Mobile computing
  • Tablets

LPDDR4/4X Mobile SDRAM

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
IC DRAM 4GBIT PARALLEL 200VFBGAIS43LQ16256A-062BLIIC DRAM 4GBIT PARALLEL 200VFBGA0View Details
IC DRAM 4GBIT PARALLEL 200VFBGAIS43LQ32128A-062BLIIC DRAM 4GBIT PARALLEL 200VFBGA116 - ImmediateView Details
IC DRAM 8GBIT PARALLEL 200TFBGAIS43LQ32256A-062BLIIC DRAM 8GBIT PARALLEL 200TFBGA1177 - ImmediateView Details
Published: 2020-08-14