Nexperia

20 V and 30 V N-Channel Trench MOSFETs

Nexperia's 20 V and 30 V N-channel trench MOSFETs feature an enhanced power dissipation capability of 1200 mW

Image of NXP Semiconductor's 20 V and 30 V N-Channel Trench MOSFETsNexperia offers their N-channel, enhancement-mode field-effect transistor (FET) in a small, SOT23 (TO-236AB), surface-mounted device (SMD), plastic package using trench MOSFET technology.

Benefits
  • Trench MOSFET technology
  • Low-threshold voltage
  • Very fast switching
  • Enhanced power dissipation capability of 1200 mW
Applications    
  • LED drivers
  • Power management
  
  • Low-side load switch
  • Switching circuits

N-Channel Standard FETs

ImageManufacturer Part NumberDescriptionAvailable QuantityPrice
MOSFET N-CH 30V 5.7A TO236ABPMV20XNERMOSFET N-CH 30V 5.7A TO236AB0 - Immediate$32.16View Details
Updated: 2017-08-08
Published: 2015-09-21