onsemi

FGH4L50T65MQDC50 IGBT

onsemi's FGH4L50T65MQDC50 is a 650 V field stop 4th generation mid-speed IGBT with a co-pack SiC diode

Image of onsemi's FGH4L50T65MQDC50 Insulated Gate Bipolar Transistors (IGBT)onsemi's FGH4L75T65MQDC50 powerhouse IGBT dominates industrial tasks by leveraging groundbreaking IGBT and SiC Schottky diode technology to deliver unrivaled efficiency. Users can tackle high-demand operations with minimal energy loss and experience true industrial power.

Features
  • Positive temperature coefficient
  • Low VCE(sat)
  • Low Eon and Eoff
Applications
  • Solar inverters
  • UPS
  • Energy storage systems
  • PFC
  • EV charging stations
Published: 2024-02-01

Related Product Highlight

Single Gate Bipolar Transistors (IGBTs) onsemi single insulated gate bipolar transistors (IGBTs) are engineered to deliver exceptional performance and efficiency in a wide range of applications.