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TP65B110HRU 650 V 110 mΩ High-Voltage GaN Bidirectional Switch
The Renesas TP65B110HRU 650 V 110 mΩ high-voltage GaN bidirectional switch offers built-in freewheeling diode with low voltage drop
The TP65B110HRU is a 650 V 110 mΩ common-drain bidirectional switch (BDS) built on the Renesas SuperGaN® Gen I bidirectional platform. It conducts current and blocks voltage in both directions with the smallest footprint and an excellent switching figure of merit. The device combines a monolithic, bidirectional high-voltage, depletion-mode GaN with normally off, low-voltage silicon MOSFETs to provide superior performance, high threshold for standard gate-drive compatibility, easy integration, and robust reliability for advanced power applications.
Features
- ±650 V continuous peak AC and DC rating, ± 800 V transient rating
- Insulated gate with a high threshold (VTH)
- Built-in freewheeling diode with low voltage drop
- Zero reverse recovery charge
- Low gate charge (Qg) and low output charge (Qoss)
- High dv/dt immunity
- High di/dt immunity
- Soft and hard switching capability
- Transient overvoltage capability
- 2 kV ESD capability (HBM and CDM)
- JEDEC-qualified GaN technology
- RoHS compliant and halogen-free packaging
TP65B110HRU 650 V 110 mΩ High-Voltage GaN Bidirectional Switch
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
 |  | TP65B110HRU-TR | 650V, 110 M GAN BDS IN TOLT | 7 - Immediate | $475.21 | View Details |
Evaluation Board
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
|  | RTDACHB0000RS-MF-1 | AC-AC HALF BRIDGE CONVERSION EVB | 0 - Immediate | $37,218.75 | View Details |
Published: 2026-04-29
