650 V Silicon Carbide Schottky Diodes

Vishay introduces their 650 V silicon carbide (SiC) Schottky diodes featuring a merged PIN Schottky (MPS) design. These devices are designed to increase the efficiency of high-frequency applications by reducing switching losses, regardless of the effects from temperature variances, allowing the devices to operate at higher temperatures. The devices’ merged PIN Schottky design shields the electric field from the Schottky barrier to reduce leakage currents while increasing surge current capability via hole injection. Compared to pure-silicon Schottky devices, these diodes handle the same level of current with only a slight increase in forward voltage drop while demonstrating a significantly higher degree of ruggedness, providing designers with increased flexibility in system optimization. They are offered in 2L TO-220AC and TO-247AD 3L packages.