BSDH10G120E2 Bourns Inc. | Discrete Semiconductor Products

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BSDH10G120E2
DigiKey Part Number	118-BSDH10G120E2-ND
Manufacturer	Bourns Inc.
Manufacturer Product Number	BSDH10G120E2
Description	DIODE SIL CARB 1200V 10A TO220
Manufacturer Standard Lead Time	18 Weeks
Customer Reference
Detailed Description	Diode 1200 V 10A Through Hole TO-220-2
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Mfr	Bourns Inc.
Series	BSD
Packaging	Tube
Part Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	10A
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 10 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	50 µA @ 1200 V
Capacitance @ Vr, F	481pF @ 1V, 1MHz
Grade	-
Qualification	-
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220-2
Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	BSDH10G120