IGT60R070D1E8220ATMA1 Infineon Technologies | Single FETs, MOSFETs

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IGT60R070D1E8220ATMA1
DigiKey Part Number	448-IGT60R070D1E8220ATMA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IGT60R070D1E8220ATMA1
Description	GAN HV
Customer Reference
Detailed Description	N-Channel 600 V 31A (Tc) 125W (Tc) Surface Mount PG-HSOF-8-3
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolGaN™
Packaging	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1.6V @ 2.6mA
Vgs (Max)	-10V
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-3
Package / Case	8-PowerSFN