N-Channel 650 V 10.1A (Tc) 28W (Tc) Through Hole PG-TO220-FP
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IPAN65R650CEXKSA1

DigiKey Part Number
IPAN65R650CEXKSA1-ND
Manufacturer
Manufacturer Product Number
IPAN65R650CEXKSA1
Description
MOSFET N-CH 650V 10.1A TO220
Customer Reference
Detailed Description
N-Channel 650 V 10.1A (Tc) 28W (Tc) Through Hole PG-TO220-FP
Datasheet
 Datasheet
EDA/CAD Models
IPAN65R650CEXKSA1 Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Not For New Designs
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
28W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
Base Product Number
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QuantityUnit PriceExt Price
1₱96.47000₱96.47
50₱45.86540₱2,293.27
100₱40.92280₱4,092.28
500₱32.24156₱16,120.78
1,000₱29.44748₱29,447.48
2,000₱27.09763₱54,195.26
5,000₱24.55520₱122,776.00
10,000₱24.37828₱243,782.80
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.