Bipolar (BJT) Transistor NPN 50 V 1 A 150MHz 900 mW Through Hole 3-MP
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2SD863E-AE

DigiKey Part Number
2156-2SD863E-AE-ND
Manufacturer
Manufacturer Product Number
2SD863E-AE
Description
TRANS NPN 50V 1A 3-MP
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 50 V 1 A 150MHz 900 mW Through Hole 3-MP
Datasheet
 Datasheet
Product Attributes
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Category
Current - Collector Cutoff (Max)
1µA (ICBO)
Mfr
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA, 2V
Packaging
Bulk
Power - Max
900 mW
Part Status
Active
Frequency - Transition
150MHz
Transistor Type
Operating Temperature
150°C (TJ)
Current - Collector (Ic) (Max)
1 A
Mounting Type
Through Hole
Voltage - Collector Emitter Breakdown (Max)
50 V
Package / Case
TO-226-3, TO-92-3 Long Body
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Supplier Device Package
3-MP
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 9,000
Non-Cancelable/Non-Returnable
MARKETPLACE PRODUCT
Will ship in approximately 10 days from Rochester Electronics LLC
A separate ₱5,716.80 flat rate shipping fee will apply
Maximum purchase limit
To support all customers' research and development needs, this product has a maximum purchase limit. This limit may be purchased every 30 days and any orders above the limit may be cancelled.
Bulk:9000
All prices are in PHP
Bulk
QuantityUnit PriceExt Price
1,514₱11.91000₱18,031.74