N-Channel 650 V 30A (Tc) 134W Through Hole TO-247N
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N-Channel 650 V 30A (Tc) 134W Through Hole TO-247N
ROHM 4-pin SiC Power MOSFETs | Digi-Key Daily
AECQ SIC FET’s | Datasheet Preview

SCT3080ALHRC11

DigiKey Part Number
SCT3080ALHRC11-ND
Manufacturer
Rohm Semiconductor
Manufacturer Product Number
SCT3080ALHRC11
Description
SICFET N-CH 650V 30A TO247N
Manufacturer Standard Lead Time
27 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 30A (Tc) 134W Through Hole TO-247N
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Rohm Semiconductor
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
104mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
5.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
571 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
134W
Operating Temperature
175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
SCT3080
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In-Stock: 417
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Quantity
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Tube
QuantityUnit PriceExt Price
1₱799.11000₱799.11
30₱765.70667₱22,971.20
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.