Name: SI3459BDV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3459BDV-T1-GE3TR-ND
Price: 72.06 PHP
Availability: InStock

SI3459BDV-T1-GE3
cms-digikey-product-number	SI3459BDV-T1-GE3TR-ND - Tape & Reel (TR) SI3459BDV-T1-GE3CT-ND - Cut Tape (CT) SI3459BDV-T1-GE3DKR-ND - Digi-Reel®
cms-manufacturer	Vishay Siliconix
cms-manufacturer-product-number	SI3459BDV-T1-GE3
cms-description	MOSFET P-CH 60V 2.9A 6TSOP
cms-standard-lead-time	11 Weeks
cms-customer-reference
cms-detailed-description	P-Channel 60 V 2.9A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
Datasheet	Datasheet
cms-eda-cad-models	SI3459BDV-T1-GE3 Models

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	216mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 3.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6
Base Product Number	SI3459

SI3459BDV-T1-GE3