Name: SQS966ENW-T1_GE3
Brand: Vishay Siliconix
SKU: SQS966ENW-T1_GE3TR-ND
Price: 106.59 PHP
Availability: InStock

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SQS966ENW-T1_GE3
DigiKey Part Number	SQS966ENW-T1_GE3TR-ND - Tape & Reel (TR) SQS966ENW-T1_GE3CT-ND - Cut Tape (CT) SQS966ENW-T1_GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SQS966ENW-T1_GE3
Description	MOSFET 2N-CH 60V 6A PWRPAK1212
Manufacturer Standard Lead Time	37 Weeks
Customer Reference
Detailed Description	Mosfet Array 60V 6A (Tc) 27.8W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8W Dual
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays	Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 10V
Manufacturer Vishay Siliconix	Input Capacitance (Ciss) (Max) @ Vds 572pF @ 25V
Series TrenchFET®	Power - Max 27.8W (Tc)
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Operating Temperature -55°C ~ 175°C (TJ)
Part Status Active	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Configuration 2 N-Channel (Dual)	Mounting Type Surface Mount, Wettable Flank
Drain to Source Voltage (Vdss) 60V	Package / Case PowerPAK® 1212-8W Dual
Current - Continuous Drain (Id) @ 25°C 6A (Tc)	Supplier Device Package PowerPAK® 1212-8W Dual
Rds On (Max) @ Id, Vgs 36mOhm @ 1.25A, 10V	Base Product Number SQS966
Vgs(th) (Max) @ Id 2.5V @ 250µA

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SQS966ENW-T1_GE3