Toshiba TCK42xG series of gate driver ICs help to achieve low-loss Break-Before-Make (BBM) and Make-Before-Break (MBB) switching. Applications such as smartphones, wearables, IoT, and home console systems typically have multiple input power sources, ranging from wireless to USB-PD to internal batteries. Power multiplexing of different input power sources is a key requirement within the power management circuit.
Broadly speaking, BBM and MBB are the output-switching methods of power multiplexer circuits. BBM switches the output after dropping to 0 V, and is suitable for applications that wish to prevent reverse current flow to the input during output switching, such as battery charging circuits. MBB switches the output without dropping to 0 V and is suitable for applications where the power supply must be maintained, such as audio circuits or back-up power. Increased power consumption and expanded device functionality require devices to have efficient BBM and MBB switching to conserve power.
The TCK42xG applies the optimum voltage to the gate of low on-resistance N-channel MOSFETs to achieve more power-efficient and compact switching than monolithic ICs. In addition, the TCK42xG series offers reverse flow prevention during BBM/MBB switching by being compatible with common drain MOSFETs.
Resources
- Common drain connection N-channel MOSFET circuit example

- Application circuit example for power multiplexer

- Power multiplexer output switching method from 5 V (VINA) to 20 V (VINB)
Features
- Create BBM or MBB power Mux
- Supports power lines from 5 V to 24 V
- Over voltage lock out (OVLO) and under voltage lock out (UVLO)
- Small size
Applications
- Smartphones
- Wearables
- SSD
- Mobile
- Smart speakers
- IoT devices
- Tablets
- “Always on” devices